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CBRAM® Technology

Breakthrough Resistive RAM (ReRAM) Technology

速度和功耗物质，特别是在现代化的边缘计算和构成物联网的AI应用程序中（物联网）。亚博国际官网平台网址标准情况下，关闭存储器产品无法满足这些要求。亚博电竞菠菜所需要的是一个突破性的记忆技术，可以满足在互联网边缘通信的数十亿个电池供电设备的要求。

自2007年以来，Dialog（通过收购Adesto）率先开发了电阻RAM技术，我们凭借强大的专利组合在业界获得认可。我们已经发展了我们的导电桥接RAM（CBRAM）电阻存储技术，从原子到电路再到产品。我们的专业知识包括对生产电阻存储器所需的物理、材料和设计的基本理解，以及对生态系统的丰富经验；从原材料到成品设备制造。亚博电竞菠菜

为什么reram？

电阻RAM，特别是对话框的CBRAM，提供了与其他非易失性存储器技术的显着优势：

速度和力量
适用于嵌入式NVM
内存计算
Tolerant to harsh environments

苛刻应用的性能亚博国际官网平台网址

与标准闪存技术（〜1ms）相比，CBRAM的显着优点是其位细胞中的写入操作非常快（<1US），并且它也不需要预先擦除一点。这使得CBRAM产品的写入操作比标准闪光快20倍，同时消耗10到100倍的亚博电竞菠菜能量。

显著延长电池寿命

Dialog's CBRAM technology is a breakthrough non-volatile ReRAM memory technology. It consumes significantly less energy than today’s leading memories without sacrificing performance or reliability. This discrete non-volatile memory (NVM) technology can achieve 50-100x lower power in read/write operations compared to competitive solutions.

With CBRAM, designers can extend the battery life of their systems and/or use smaller batteries, or even design systems for battery-free operation through energy harvesting. Since CBRAM can withstand medical sterilization processes, it’s also ideal for smart medical devices.

Moneta vs FRAM: Read – Power Down – Write comparison

Moneta与EEPROM：读-掉电-写比较

内部CBRAM

Dialog's CBRAM memory is created by applying fab-friendly, patented metallization and dielectric stack layers between standard CMOS interconnect metal layers. The result is a superior NVM technology that’s easy to embed into standard logic flows.

CBRAM技术依赖于电化学制作和突破导电链路。该过程改变了用于表示数据的CBRAM存储元素的电阻。导电链接是稳健的，可以承受高热应力。

View of Dialog's Resistive Memory Architecture. Data stored as a robust conductive bridge vs. charges on a traditional floating gate

CBRAM产品的横截面显示了在标准CMOS工艺中易于集成。

Operating principle of CBRAM; data stored as robust conductive links created by voltages and currents.

CBRAM is used in a multitude of applications with demanding environments and conditions. Unlike other non-volatile memory technologies, CBRAM provides a robust solution and is well suited for harsh environments.

耐受恶劣环境
测试	健康）状况	Result
Gamma	200升（20m rad）	通过了
e-beam	200升（20m rad）	通过了
重离子	75 mev·cm²/ mg.	通过了
高温（SMT）	10min @ 260ºC	通过了
Magnetic fields	~10^3.高斯	通过了
UV light	30min @ 12mw / cm²	通过了

对话框技术的CBRAM技术的许可计划

Dialog (through its acquisition of Adesto) is the recognized leader in the commercialization of resistive memories and in forging licensing agreements with SoC partners in the semiconductor industry. Foundries, IDMs or fabless companies looking for low-power embedded NVM solutions should contact us directly to explore partnership opportunities.

上海华丽微电子公司（HLMC）宣布与Adesto和CNE合作

DB HiTek Licenses Adesto’s CBRAM® Technology for IoT Applications

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