Characterize SIMO

I'm trying to characterize the quiscent current for the various power domain inside the DA14683.

I would like to know how I can use the SIMO for both 1V8 and 1V8P in extended sleep.

In searching through the code I believe the function apply_wfi inside sys_power_mgr.c is responsible for placing the DA14683 into the desired sleep state.

I tried commenting out:

if (dg_configUSE_DCDC == 1) { hw_cpm_dcdc_off(); }

to prevent the SIMO from being turned off. However, when I measured the current consumption and the power rail, I still see 1V8 and 1V8P active, but the current consumption is exactly the same as when the code is not commented out. It's almost as if there is another code snippet that is enabling the LDO_RET and disabling the SIMO.

I would expect the current to be different between retention LDO and SIMO.

All these tests are being done on the ProDK with the DA14683 daughter card. The current measurements are done by removing the daughter module and hooking it up to a Joulescope with a lithium ion battery as the power source.

I can at least verify the datasheet's extended sleep current to be close to 6.4uA when both Vflash and Vext are turned off.